InGaN trench defects

FEI Helios 600

  • Dr Michele (Shelly) Conroy

Top surface of InGaN MQWs showing pits known as trench defects, known to form due to high lattice mismatch between GaN and InGaN. These types of defects have been receiving more interest in detailed studies lately due to their peculiar emission properties such as simultaneous red and blue shifting

InGaN trench defects